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SCTH35N65G2V-7AG STMicroelectronics
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SCTH35N65G2V-7AG

Mfr. No: SCTH35N65G2V-7AG
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25
Datasheet: SCTH35N65G2V-7AG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement SCT055H65G3AG
4,519
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

Manufactured by STMicroelectronics, the SCTH35N65G2V-7AG is classified under sic mosfets. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 45A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 67mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get SCTH35N65G2V-7AG from Simplytronix, shipped same day with a genuine parts guarantee.

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