Search Products

Menu
SCTL90N65G2V STMicroelectronics
*For representation only.

SCTL90N65G2V

Mfr. No: SCTL90N65G2V
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datasheet: SCTL90N65G2V Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V
FET Feature -
Power Dissipation (Max) 935W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV
Package / Case 4-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,304
Units In Stock
📦 Reel
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

STMicroelectronics's SCTL90N65G2V is a widely used sic mosfets part in electronic designs. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 40A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 24mOhm @ 40A, 18V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SCTL90N65G2V with same-day shipping and guaranteed authenticity.

Similar Products
SCT019HU120G3AG
SCT019HU120G3AG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 12...
SCT040H65G3AG
SCT040H65G3AG STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 65...
SCTW70N120G2V
SCTW70N120G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ...
SCTL35N65G2V
SCTL35N65G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ....
SCTW90N65G2V
SCTW90N65G2V STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mO...