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SCTWA35N65G2V-4 STMicroelectronics
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SCTWA35N65G2V-4

Mfr. No: SCTWA35N65G2V-4
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
Lifecycle: Obsolete
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
Power Dissipation (Max) 240W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement SCT055W65G3-4AG
13,649
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

STMicroelectronics manufactures the SCTWA35N65G2V-4, a sic mosfets part used in electronic assemblies. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 45A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 67mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory. You can source SCTWA35N65G2V-4 through Simplytronix, with fast shipping and verified authenticity.

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