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SCTWA70N120G2V-4 STMicroelectronics
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SCTWA70N120G2V-4

Mfr. No: SCTWA70N120G2V-4
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
Datasheet: SCTWA70N120G2V-4 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
FET Feature -
Power Dissipation (Max) 547W
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement SCT020W120G3-4AG
12,939
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by STMicroelectronics, the SCTWA70N120G2V-4 is classified under sic mosfets. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 91A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 30mOhm @ 50A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get SCTWA70N120G2V-4 from Simplytronix, shipped same day with a genuine parts guarantee.

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