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SCT025W120G3-4AG STMicroelectronics
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SCT025W120G3-4AG

Mfr. No: SCT025W120G3-4AG
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datasheet: SCT025W120G3-4AG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
FET Feature -
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,549
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 252 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a sic mosfets component, the SCT025W120G3-4AG is manufactured and supplied by STMicroelectronics. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 56A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 37mOhm @ 25A, 18V. This part has a typical lead time of 252 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SCT025W120G3-4AG in stock, backed by a genuine parts guarantee and quick dispatch.

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