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SCT055TO65G3 STMicroelectronics
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SCT055TO65G3

Mfr. No: SCT055TO65G3
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
Datasheet: SCT055TO65G3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 72mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 687 pF @ 400 V
FET Feature -
Power Dissipation (Max) 234W (Tc)
Operating Temperature -65°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TOLL (HV)
Package / Case 8-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,112
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 224 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

STMicroelectronics's SCT055TO65G3 is a widely used sic mosfets part in electronic designs. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 30A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 72mOhm @ 15A, 18V. This part has a typical lead time of 224 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SCT055TO65G3 with same-day shipping and guaranteed authenticity.

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