*For representation only.
SCT10N120AG
| Mfr. No: | SCT10N120AG |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an |
| Lifecycle: | Active |
⚙
Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 600 |
10,267
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 147 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
The SCT10N120AG from STMicroelectronics falls under the sic mosfets category. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 12A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 690mOhm @ 6A, 20V. This part has a typical lead time of 147 Days from factory. SCT10N120AG is available through Simplytronix, sourced and verified for authenticity.
