| Mfr. No: | SCTH100N65G2-7AG |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2 |
| Datasheet: | SCTH100N65G2-7AG Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Alternate Packaging | |
| Suggested Replacement | SCT018H65G3-7 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
As a sic mosfets component, the SCTH100N65G2-7AG is manufactured and supplied by STMicroelectronics. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 95A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 26mOhm @ 50A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SCTH100N65G2-7AG in stock, backed by a genuine parts guarantee and quick dispatch.