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SCTWA30N120 STMicroelectronics
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SCTWA30N120

Mfr. No: SCTWA30N120
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 long leads
Datasheet: SCTWA30N120 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V
FET Feature -
Power Dissipation (Max) 270W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package HiP247™ Long Leads
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,271
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

STMicroelectronics manufactures the SCTWA30N120, a sic mosfets part used in electronic assemblies. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 45A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 100mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SCTWA30N120 through Simplytronix, with fast shipping and verified authenticity.

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