| Mfr. No: | SCTWA30N120 |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 long leads |
| Datasheet: | SCTWA30N120 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ Long Leads |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 600 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
STMicroelectronics manufactures the SCTWA30N120, a sic mosfets part used in electronic assemblies. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 45A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 100mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SCTWA30N120 through Simplytronix, with fast shipping and verified authenticity.