| Mfr. No: | SCTWA35N65G2V |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 650 V 45 A 75 mOhm |
| Datasheet: | SCTWA35N65G2V Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 73000 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 Long Leads |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 600 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
SCTWA35N65G2V is a sic mosfets component manufactured by STMicroelectronics. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 45A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 72mOhm @ 20A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SCTWA35N65G2V in stock, verified authentic and ready for same-day dispatch.