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HN1C01FE-Y,LF Toshiba
*For representation only.

HN1C01FE-Y,LF

Mfr. No: HN1C01FE-Y,LF
Mfr.: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor for Small Signal Amp
Lifecycle: Active
Datasheet: HN1C01FE-Y,LF Datasheet (PDF)
⚙ Specifications
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,336
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

As a bipolar transistors - bjt component, the HN1C01FE-Y,LF is manufactured and supplied by Toshiba. Among its key specs are transistor type: 2 NPN (Dual), current, collector (ic): 150mA, voltage, collector emitter breakdown: 50V, vce saturation (max) @ ib, ic: 250mV @ 10mA, 100mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 2mA, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries HN1C01FE-Y,LF in stock, backed by a genuine parts guarantee and quick dispatch.

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