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IRFBC20SPBF Vishay Semiconductors
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IRFBC20SPBF

Mfr. No: IRFBC20SPBF
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs TO263 600V 2.2A N-CH MOSFET
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IRFBC20STRLPBF
Suggested Replacement
13,473
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the IRFBC20SPBF, a mosfets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 2.2A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 4.4Ohm @ 1.3A, 10V. This part has a typical lead time of 0 Days from factory. You can source IRFBC20SPBF through Simplytronix, with fast shipping and verified authenticity.

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