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IRFD320PBF Vishay Semiconductors
*For representation only.

IRFD320PBF

Mfr. No: IRFD320PBF
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs HVMDIP 400V .49A N-CH MOSFET
Datasheet: IRFD320PBF Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 490mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
📦 Product Attributes
Packaging Tube
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,819
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

As a mosfets component, the IRFD320PBF is manufactured and supplied by Vishay Semiconductors. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 400 V, current, continuous drain (id) @ 25°C: 490mA (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 1.8Ohm @ 210mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IRFD320PBF in stock, backed by a genuine parts guarantee and quick dispatch.

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