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SI3438DV-T1-GE3 Vishay Semiconductors
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SI3438DV-T1-GE3

Mfr. No: SI3438DV-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 40V Vds 20V Vgs TSOP-6
Datasheet: SI3438DV-T1-GE3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 20 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,218
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541219000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SI3438DV-T1-GE3, made by Vishay Semiconductors, belongs to the mosfets product category. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 7.4A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 35.5mOhm @ 5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SI3438DV-T1-GE3 for same-day shipping with genuine parts guaranteed.

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