*For representation only.
SI4288DY-T1-GE3
| Mfr. No: | SI4288DY-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 40V Vds 20V Vgs SO-8 |
| Datasheet: | SI4288DY-T1-GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 20V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
4,065
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 330 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541299000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
SI4288DY-T1-GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 9.2A and rds on (max) @ id, vgs: 20mOhm @ 10A, 10V. This part has a typical lead time of 330 Days from factory and ships with a full manufacturer datasheet available for download. Order SI4288DY-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.
