| Mfr. No: | SI4816BDY-T1-E3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 30V Vds 20V Vgs SO-8 |
| Datasheet: | SI4816BDY-T1-E3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 8.2A |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 6.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1W, 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
Vishay Semiconductors's SI4816BDY-T1-E3 is a widely used mosfets part in electronic designs. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: Logic Level Gate, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 5.8A, 8.2A and rds on (max) @ id, vgs: 18.5mOhm @ 6.8A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SI4816BDY-T1-E3 with same-day shipping and guaranteed authenticity.