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SI4816BDY-T1-E3 Vishay Semiconductors
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SI4816BDY-T1-E3

Mfr. No: SI4816BDY-T1-E3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 30V Vds 20V Vgs SO-8
Datasheet: SI4816BDY-T1-E3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 8.2A
Rds On (Max) @ Id, Vgs 18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W, 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,454
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541210000
USHTS 8541290065
JPHTS 8541210101
KRHTS 8541219000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors's SI4816BDY-T1-E3 is a widely used mosfets part in electronic designs. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: Logic Level Gate, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 5.8A, 8.2A and rds on (max) @ id, vgs: 18.5mOhm @ 6.8A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SI4816BDY-T1-E3 with same-day shipping and guaranteed authenticity.

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