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| Mfr. No: | SI5908BDC-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs DUAL N-CHANNEL 20-V (D-S) MOSFET |
| Datasheet: | SI5908BDC-T1-GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 10V |
| Power - Max | 2.1W (Ta), 3.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Leads |
| Supplier Device Package | 1206-8 ChipFET™ |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 50 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SI5908BDC-T1-GE3, made by Vishay Semiconductors, belongs to the mosfets product category. It features technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 4A (Ta), 4A (Tc) and rds on (max) @ id, vgs: 36mOhm @ 6A, 4.5V. This part has a typical lead time of 50 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SI5908BDC-T1-GE3 for same-day shipping with genuine parts guaranteed.
