| Mfr. No: | SI6926ADQ-T1-BE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs TSSOP N CHAN 2.5V |
| Datasheet: | SI6926ADQ-T1-BE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Packaging | Bulk |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
The SI6926ADQ-T1-BE3 from Vishay Semiconductors falls under the mosfets category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 4.1A (Ta) and rds on (max) @ id, vgs: 30mOhm @ 4.5A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SI6926ADQ-T1-BE3 is available through Simplytronix, sourced and verified for authenticity.