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SI7117DN-T1-E3 Vishay Semiconductors
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SI7117DN-T1-E3

Mfr. No: SI7117DN-T1-E3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs -150V Vds 20V Vgs PowerPAK 1212-8
Lifecycle: Active
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,265
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SI7117DN-T1-E3 from Vishay Semiconductors falls under the mosfets category. Its datasheet lists FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 150 V, current, continuous drain (id) @ 25°C: 2.17A (Tc), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 1.2Ohm @ 500mA, 10V. This part has a typical lead time of 0 Days from factory. SI7117DN-T1-E3 is available through Simplytronix, sourced and verified for authenticity.

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