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SI7655ADN-T1-GE3 Vishay Semiconductors
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SI7655ADN-T1-GE3

Mfr. No: SI7655ADN-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S
Datasheet: SI7655ADN-T1-GE3 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 10 V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,432
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SI7655ADN-T1-GE3 from Vishay Semiconductors falls under the mosfets category. Among its key specs are FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 40A (Tc), drive voltage: 2.5V, 10V and rds on (max) @ id, vgs: 3.6mOhm @ 20A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SI7655ADN-T1-GE3 is available through Simplytronix, sourced and verified for authenticity.

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