*For representation only.
SI7922DN-T1-GE3
| Mfr. No: | SI7922DN-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
| Datasheet: | SI7922DN-T1-GE3 Datasheet (PDF) |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
7,843
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 21 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Vishay Semiconductors, the SI7922DN-T1-GE3 is classified under mosfets. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 1.8A and rds on (max) @ id, vgs: 195mOhm @ 2.5A, 10V. This part has a typical lead time of 21 Days from factory and ships with a full manufacturer datasheet available for download. Get SI7922DN-T1-GE3 from Simplytronix, shipped same day with a genuine parts guarantee.
