*For representation only.
SI7942DP-T1-GE3
| Mfr. No: | SI7942DP-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 |
| Lifecycle: | Active |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 5.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,771
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 33 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Vishay Semiconductors manufactures the SI7942DP-T1-GE3, a mosfets part used in electronic assemblies. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 3.8A and rds on (max) @ id, vgs: 49mOhm @ 5.9A, 10V. This part has a typical lead time of 33 Days from factory. You can source SI7942DP-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.
