*For representation only.
SI8916EDB-T6-E1
| Mfr. No: | SI8916EDB-T6-E1 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs COMMON DRAIN DUAL N-CH 20V (S1-S2)MO |
| Datasheet: | SI8916EDB-T6-E1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 10V |
| Power - Max | 770mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, No Lead |
| Supplier Device Package | MicroFOOT® 2x2NB |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 3000 |
14,637
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 443 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
The SI8916EDB-T6-E1 from Vishay Semiconductors falls under the mosfets category. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 2.5A (Ta) and rds on (max) @ id, vgs: 75mOhm @ 3A, 4.5V. This part has a typical lead time of 443 Days from factory and ships with a full manufacturer datasheet available for download. SI8916EDB-T6-E1 is available through Simplytronix, sourced and verified for authenticity.
