*For representation only.
SIA906EDJ-T1-GE3
| Mfr. No: | SIA906EDJ-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 |
| Lifecycle: | Active |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,033
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
SIA906EDJ-T1-GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 4.5A and rds on (max) @ id, vgs: 46mOhm @ 3.9A, 4.5V. This part has a typical lead time of 0 Days from factory. Order SIA906EDJ-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.
