*For representation only.
SIA918EDJ-T1-GE3
| Mfr. No: | SIA918EDJ-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 30V Vds 8V Vgs PowerPAK SC-70 |
| Datasheet: | SIA918EDJ-T1-GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,458
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 59 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
As a mosfets component, the SIA918EDJ-T1-GE3 is manufactured and supplied by Vishay Semiconductors. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 4.5A (Tc) and rds on (max) @ id, vgs: 58mOhm @ 3A, 4.5V. This part has a typical lead time of 59 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SIA918EDJ-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
