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SISB46DN-T1-GE3 Vishay Semiconductors
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SISB46DN-T1-GE3

Mfr. No: SISB46DN-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SISB46DN-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Rds On (Max) @ Id, Vgs 11.71mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 20V
Power - Max 23W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,147
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 245 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfets component, the SISB46DN-T1-GE3 is manufactured and supplied by Vishay Semiconductors. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 34A (Tc) and rds on (max) @ id, vgs: 11.71mOhm @ 5A, 10V. This part has a typical lead time of 245 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SISB46DN-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.

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