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SISD4604LDN-T1-UE3 Vishay Semiconductors
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SISD4604LDN-T1-UE3

Mfr. No: SISD4604LDN-T1-UE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs PPAK1212 N-CH 60V 52A
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 30 V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-F
Package / Case PowerPAK® 1212-8SH
📦 Product Attributes
Packaging
Standard Pack Qty
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,434
Units In Stock
📦
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 59 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the SISD4604LDN-T1-UE3, a mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 28A (Ta), 91A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3.4mOhm @ 15A, 10V. This part has a typical lead time of 59 Days from factory. You can source SISD4604LDN-T1-UE3 through Simplytronix, with fast shipping and verified authenticity.

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