*For representation only.
SISF02DN-T1-GE3
| Mfr. No: | SISF02DN-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs PPAK1212 2NCH 25V 30.5A |
| Datasheet: | SISF02DN-T1-GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 30.5A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 10V |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SCD |
| Supplier Device Package | PowerPAK® 1212-8SCD |
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Product Attributes
| Packaging | Ammo Pack |
| Standard Pack Qty | 3000 |
12,517
Units In Stock
📦 Ammo Pack
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 58 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Vishay Semiconductors manufactures the SISF02DN-T1-GE3, a mosfets part used in electronic assemblies. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual) Common Drain, FET feature: -, drain to source voltage: 25V, current, continuous drain (id) @ 25°C: 30.5A (Ta), 60A (Tc) and rds on (max) @ id, vgs: 3.5mOhm @ 7A, 10V. This part has a typical lead time of 58 Days from factory and ships with a full manufacturer datasheet available for download. You can source SISF02DN-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.
