*For representation only.
SISF12EDN-T1-GE3
| Mfr. No: | SISF12EDN-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs COMMON-DRAIN DUAL N-CH 12V (S1-S2)MO |
| Datasheet: | SISF12EDN-T1-GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 109A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950pF @ 6V |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SCD |
| Supplier Device Package | PowerPAK® 1212-8SCD |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 3000 |
10,082
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 224 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Vishay Semiconductors, the SISF12EDN-T1-GE3 is classified under mosfets. It features technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 12V, current, continuous drain (id) @ 25°C: 30A (Ta), 109A (Tc) and rds on (max) @ id, vgs: 3.6mOhm @ 10A, 4.5V. This part has a typical lead time of 224 Days from factory and ships with a full manufacturer datasheet available for download. Get SISF12EDN-T1-GE3 from Simplytronix, shipped same day with a genuine parts guarantee.
