*For representation only.
SIZ250DT-T1-GE3
| Mfr. No: | SIZ250DT-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S |
| Datasheet: | SIZ250DT-T1-GE3 Datasheet (PDF) |
⚙
Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V, 790pF @ 30V |
| Power - Max | 4.3W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (3.3x3.3) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,971
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
The SIZ250DT-T1-GE3, made by Vishay Semiconductors, belongs to the mosfets product category. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 14A (Ta), 38A (Tc) and rds on (max) @ id, vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SIZ250DT-T1-GE3 for same-day shipping with genuine parts guaranteed.
