*For representation only.
SIZ350DT-T1-GE3
| Mfr. No: | SIZ350DT-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3 |
| Datasheet: | SIZ350DT-T1-GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.75mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 940pF @ 15V |
| Power - Max | 3.7W (Ta), 16.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-Power33 (3x3) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,891
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 51 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
The SIZ350DT-T1-GE3, made by Vishay Semiconductors, belongs to the mosfets product category. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 18.5A (Ta), 30A (Tc) and rds on (max) @ id, vgs: 6.75mOhm @ 15A, 10V. This part has a typical lead time of 51 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SIZ350DT-T1-GE3 for same-day shipping with genuine parts guaranteed.
