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SIZ926DT-T1-GE3 Vishay Semiconductors
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SIZ926DT-T1-GE3

Mfr. No: SIZ926DT-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 25V Vds 16V Vgs PowerPAIR 6 x 5
Datasheet: SIZ926DT-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 925pF @ 10V, 2150pF @ 10V
Power - Max 20.2W, 40W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,716
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SIZ926DT-T1-GE3, made by Vishay Semiconductors, belongs to the mosfets product category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 25V, current, continuous drain (id) @ 25°C: 40A (Tc), 60A (Tc) and rds on (max) @ id, vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SIZ926DT-T1-GE3 for same-day shipping with genuine parts guaranteed.

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