| Mfr. No: | SIZ926DT-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 25V Vds 16V Vgs PowerPAIR 6 x 5 |
| Datasheet: | SIZ926DT-T1-GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V, 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 925pF @ 10V, 2150pF @ 10V |
| Power - Max | 20.2W, 40W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SIZ926DT-T1-GE3, made by Vishay Semiconductors, belongs to the mosfets product category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 25V, current, continuous drain (id) @ 25°C: 40A (Tc), 60A (Tc) and rds on (max) @ id, vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SIZ926DT-T1-GE3 for same-day shipping with genuine parts guaranteed.