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SIZ980BDT-T1-GE3 Vishay Semiconductors
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SIZ980BDT-T1-GE3

Mfr. No: SIZ980BDT-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5
Datasheet: SIZ980BDT-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual), Schottky
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V, 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V, 3655pF @ 15V
Power - Max 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,367
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

SIZ980BDT-T1-GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), Schottky, FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) and rds on (max) @ id, vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SIZ980BDT-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.

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