| Mfr. No: | SIZ980BDT-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5 |
| Datasheet: | SIZ980BDT-T1-GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual), Schottky |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 79nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 3655pF @ 15V |
| Power - Max | 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
SIZ980BDT-T1-GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), Schottky, FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) and rds on (max) @ id, vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SIZ980BDT-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.