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SIZF360DT-T1-GE3 Vishay Semiconductors
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SIZF360DT-T1-GE3

Mfr. No: SIZF360DT-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 30-V W/SCHOTTKY PowerPAIR 3 x 3FDC
Datasheet: SIZF360DT-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual), Schottky
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V, 3150pF @ 15V
Power - Max 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Supplier Device Package 6-PowerPair™
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,444
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 180 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

SIZF360DT-T1-GE3 is a mosfets component manufactured by Vishay Semiconductors. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), Schottky, FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) and rds on (max) @ id, vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V. This part has a typical lead time of 180 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SIZF360DT-T1-GE3 in stock, verified authentic and ready for same-day dispatch.

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