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SIZF916DT-T1-GE3 Vishay Semiconductors
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SIZF916DT-T1-GE3

Mfr. No: SIZF916DT-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F
Lifecycle: Active
Datasheet: SIZF916DT-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 4320pF @ 15V
Power - Max 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,714
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

SIZF916DT-T1-GE3 is a mosfets component manufactured by Vishay Semiconductors. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 23A (Ta), 40A (Tc) and rds on (max) @ id, vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SIZF916DT-T1-GE3 in stock, verified authentic and ready for same-day dispatch.

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