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SQ1563AEH-T1_GE3 Vishay Semiconductors
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SQ1563AEH-T1_GE3

Mfr. No: SQ1563AEH-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs N Ch 20Vds 8Vgs AEC-Q101 Qualified
Datasheet: SQ1563AEH-T1_GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 850mA (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.25nC @ 4.5V, 1.33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 89pF @ 10V, 84pF @ 10V
Power - Max 1.5W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,257
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541210000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The SQ1563AEH-T1_GE3 from Vishay Semiconductors falls under the mosfets category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: N and P-Channel, FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 850mA (Tc) and rds on (max) @ id, vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SQ1563AEH-T1_GE3 is available through Simplytronix, sourced and verified for authenticity.

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