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SQ3989EV-T1_GE3 Vishay Semiconductors
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SQ3989EV-T1_GE3

Mfr. No: SQ3989EV-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs Dual P-Channel 30V TSOP-6
Datasheet: SQ3989EV-T1_GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Rds On (Max) @ Id, Vgs 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.67W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging SQ3989EV-T1_BE3
Suggested Replacement SQ3989EV-T1_BE3
12,795
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

SQ3989EV-T1_GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 P-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 2.5A (Tc) and rds on (max) @ id, vgs: 155mOhm @ 400mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SQ3989EV-T1_GE3 from Simplytronix for authenticated stock and same-day order processing.

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