| Mfr. No: | SQ3989EV-T1_GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs Dual P-Channel 30V TSOP-6 |
| Datasheet: | SQ3989EV-T1_GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 400mA, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.1nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.67W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | SQ3989EV-T1_BE3 |
| Suggested Replacement | SQ3989EV-T1_BE3 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
SQ3989EV-T1_GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 P-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 2.5A (Tc) and rds on (max) @ id, vgs: 155mOhm @ 400mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SQ3989EV-T1_GE3 from Simplytronix for authenticated stock and same-day order processing.