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SQ4483EY-T1_GE3 Vishay Semiconductors
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SQ4483EY-T1_GE3

Mfr. No: SQ4483EY-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs P Ch -30Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQ4483EY-T1_GE3 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging SQ4483EY-T1_BE3
Suggested Replacement SQ4483EY-T1_BE3
10,668
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8542390000
USHTS 8541290065
TARIC 8541210000
MXHTS 8542399901
ECCN EAR99
ℹ Product Overview

SQ4483EY-T1_GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. Notable characteristics of this part include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 30A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 8.5mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SQ4483EY-T1_GE3 from Simplytronix for authenticated stock and same-day order processing.

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