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SQ4949EY-T1_GE3 Vishay Semiconductors
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SQ4949EY-T1_GE3

Mfr. No: SQ4949EY-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
Datasheet: SQ4949EY-T1_GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Rds On (Max) @ Id, Vgs 35mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V
Power - Max 3.3W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging SQ4949EY-T1_BE3
Suggested Replacement SQ4949EY-T1_BE3
14,731
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541210000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

SQ4949EY-T1_GE3 is a mosfets component manufactured by Vishay Semiconductors. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 P-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 7.5A (Tc) and rds on (max) @ id, vgs: 35mOhm @ 5.9A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SQ4949EY-T1_GE3 in stock, verified authentic and ready for same-day dispatch.

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