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SQ9407EY-T1_BE3 Vishay Semiconductors
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SQ9407EY-T1_BE3

Mfr. No: SQ9407EY-T1_BE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs P-CHANNEL 60 V
Datasheet: SQ9407EY-T1_BE3 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1140 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging SQ9407EY-T1_GE3
Suggested Replacement
10,165
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the SQ9407EY-T1_BE3, a mosfets part used in electronic assemblies. Its datasheet lists FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 4.6A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 85mOhm @ 3.5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SQ9407EY-T1_BE3 through Simplytronix, with fast shipping and verified authenticity.

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