*For representation only.
SQJ768ELP-T1_GE3
| Mfr. No: | SQJ768ELP-T1_GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET |
| Datasheet: | SQJ768ELP-T1_GE3 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 30.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1409pF @ 25V |
| Power - Max | 35W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Supplier Device Package | PowerPAK® SO-8L Dual |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 3000 |
10,487
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 273 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Vishay Semiconductors, the SQJ768ELP-T1_GE3 is classified under mosfets. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel, FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 21A (Tc) and rds on (max) @ id, vgs: 30.5mOhm @ 15A, 10V. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. Get SQJ768ELP-T1_GE3 from Simplytronix, shipped same day with a genuine parts guarantee.
