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SQJ952EP-T1_GE3 Vishay Semiconductors
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SQJ952EP-T1_GE3

Mfr. No: SQJ952EP-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs N Ch 60Vds 20Vgs AEC-Q101 Qualified
Lifecycle: Active
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Rds On (Max) @ Id, Vgs 20mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 30V
Power - Max 25W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging SQJ952EP-T1_BE3
Suggested Replacement SQJ952EP-T1_BE3
12,811
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors's SQJ952EP-T1_GE3 is a widely used mosfets part in electronic designs. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 23A (Tc) and rds on (max) @ id, vgs: 20mOhm @ 10.3A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix supplies SQJ952EP-T1_GE3 with same-day shipping and guaranteed authenticity.

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