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SQJB46ELP-T1_BE3 Vishay Semiconductors
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SQJB46ELP-T1_BE3

Mfr. No: SQJB46ELP-T1_BE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs PowerPAK 8 x 8L
Datasheet: SQJB46ELP-T1_BE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
Power - Max 34W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
📦 Product Attributes
Packaging
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,996
Units In Stock
📦
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle New Product
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SQJB46ELP-T1_BE3 from Vishay Semiconductors falls under the mosfets category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 30A (Tc) and rds on (max) @ id, vgs: 8mOhm @ 8A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SQJB46ELP-T1_BE3 is available through Simplytronix, sourced and verified for authenticity.

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