| Mfr. No: | SQS481ENW-T1_GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs -150V Vds PowerPAK AEC-Q101 Qualified |
| Lifecycle: | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.095Ohm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 385 pF @ 75 V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541100090 |
| USHTS | 8541290065 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
As a mosfets component, the SQS481ENW-T1_GE3 is manufactured and supplied by Vishay Semiconductors. This part is specified with FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 150 V, current, continuous drain (id) @ 25°C: 4.7A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.095Ohm @ 5A, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SQS481ENW-T1_GE3 in stock, backed by a genuine parts guarantee and quick dispatch.