*For representation only.
SQS966ENW-T1_GE3
| Mfr. No: | SQS966ENW-T1_GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8W |
| Lifecycle: | Active |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
| Power - Max | 27.8W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | PowerPAK® 1212-8W Dual |
| Supplier Device Package | PowerPAK® 1212-8W Dual |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,613
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The SQS966ENW-T1_GE3 from Vishay Semiconductors falls under the mosfets category. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 6A (Tc) and rds on (max) @ id, vgs: 36mOhm @ 1.25A, 10V. This part has a typical lead time of 0 Days from factory. SQS966ENW-T1_GE3 is available through Simplytronix, sourced and verified for authenticity.
