| Mfr. No: | SQUN702E-T1_GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 40-V N- & P-CH COMMON DRAIN + 200-V |
| Datasheet: | SQUN702E-T1_GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel, Common Drain |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V, 200V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V |
| Power - Max | 48W (Tc), 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | Die |
| Supplier Device Package | Die |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Vishay Semiconductors manufactures the SQUN702E-T1_GE3, a mosfets part used in electronic assemblies. It features technology: MOSFET (Metal Oxide), configuration: N and P-Channel, Common Drain, FET feature: -, drain to source voltage: 40V, 200V, current, continuous drain (id) @ 25°C: 30A (Tc), 20A (Tc) and rds on (max) @ id, vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SQUN702E-T1_GE3 through Simplytronix, with fast shipping and verified authenticity.