Similar Products
| Mfr. No: | SI2302HDS-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs N-CHANNEL 20-V (D-S) MOSFET |
| Datasheet: | SI2302HDS-T1-GE3 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 125 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
SI2302HDS-T1-GE3 is a mosfets component manufactured by Vishay Semiconductors. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 2.6A (Ta), drive voltage: 2.5V, 4.5V and rds on (max) @ id, vgs: 57mOhm @ 3.6A, 4.5V. This part has a typical lead time of 125 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SI2302HDS-T1-GE3 in stock, verified authentic and ready for same-day dispatch.
