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SIA923AEDJ-T1-GE3 Vishay Semiconductors
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SIA923AEDJ-T1-GE3

Mfr. No: SIA923AEDJ-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs -20V .054ohm@-4.5V -4.5A P-CH
Datasheet: SIA923AEDJ-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 54mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 10V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,698
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 294 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541210000
CAHTS 8541210000
USHTS 8541290065
JPHTS 8541210101
KRHTS 8541219000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

As a mosfets component, the SIA923AEDJ-T1-GE3 is manufactured and supplied by Vishay Semiconductors. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 P-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 4.5A and rds on (max) @ id, vgs: 54mOhm @ 3.8A, 4.5V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SIA923AEDJ-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.

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