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| Mfr. No: | SIB5215DK-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs P-CHANNEL 20-V (D-S) MOSFET |
| Lifecycle: | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta), 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.45W (Ta), 13W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-75-6L |
| Package / Case | PowerPAK® SC-75-6L |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 60 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SIB5215DK-T1-GE3 from Vishay Semiconductors falls under the mosfets category. Its datasheet lists FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 7.9A (Ta), 9A (Tc), drive voltage: 2.5V, 10V and rds on (max) @ id, vgs: 26mOhm @ 5A, 10V. This part has a typical lead time of 60 Days from factory. SIB5215DK-T1-GE3 is available through Simplytronix, sourced and verified for authenticity.
