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SIDR668ADP-T1-RE3 Vishay Semiconductors
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SIDR668ADP-T1-RE3

Mfr. No: SIDR668ADP-T1-RE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC
Datasheet: SIDR668ADP-T1-RE3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23.3A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 50 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,721
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

As a mosfets component, the SIDR668ADP-T1-RE3 is manufactured and supplied by Vishay Semiconductors. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 23.3A (Ta), 104A (Tc), drive voltage: 7.5V, 10V and rds on (max) @ id, vgs: 4.8mOhm @ 20A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SIDR668ADP-T1-RE3 in stock, backed by a genuine parts guarantee and quick dispatch.

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